SEMICONDUCTOR DRIVE CIRCUIT AND POWER CONVERSION APPARATUS USING SAME

Title:

SEMICONDUCTOR DRIVE CIRCUIT AND POWER CONVERSION APPARATUS USING SAME

Document Type and Number:

WIPO Patent Application WO/2013/046420

Kind Code:

A1

Abstract:

In this semiconductor drive circuit of a switching element using a wide band gap semiconductor, a dead time is reliably ensured. In the semiconductor drive circuit, an arm has a drain terminal of a switching element of an upper arm connected to a positive electrode of a first power supply, a source terminal of a switching element of a lower arm connected to a negative electrode of the first power supply, and the source terminal of the switching element of the upper arm and the drain terminal of the switching element of the lower arm connected to each other. Each of the gate drive circuits provided by a unit of the switching element includes an FET circuit, and a parallel circuit, wherein a first resistor and a first capacitor are connected in parallel, and a first terminal is connected to the gate terminal of the switching element. The FET circuit has a second terminal of the parallel circuit connected to the source terminal thereof, one end of a second capacitor connected to the gate terminal thereof, a second resistor connected to between the drain terminal and the gate terminal, and has a second power supply connected to between the drain terminal and the other terminal of the second capacitor. The second power supply is a three-level power supply having levels thereof configured of zero potential, a positive value and a negative value, and is an alternating current power supply that includes a period having zero potential between the positive value and the negative value. The second power supply is configured such that, during a period when the positive value is applied to one of the gate drive circuits, the negative value is applied to the other one of the gate drive circuits, and in the second power supply, the other end of the second capacitor, said the other end being connected to the gate terminal of the FET circuit, is connected to the source terminal of the switching element.

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TRANSISTOR INVERTER

Inventors:

HATANAKA AYUMU (JP)
KATO KAORU (JP)
ISHIKAWA KATSUMI (JP)
MARU NAOKI (JP)

Application Number:

PCT/JP2011/072529

Publication Date:

April 04, 2013

Filing Date:

September 30, 2011

Export Citation:

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Assignee:

HITACHI LTD (JP)
HATANAKA AYUMU (JP)
KATO KAORU (JP)
ISHIKAWA KATSUMI (JP)
MARU NAOKI (JP)

International Classes:

H02M7/537; H01L21/822; H01L27/04

Domestic Patent References:

WO2010070899A1

2010-06-24

Foreign References:

JP2008211703A	2008-09-11
JP2007288919A	2007-11-01
JP2005065404A	2005-03-10
JPH0622560A	1994-01-28
JP2010028962A	2010-02-04
JP2002335679A	2002-11-22
JP2011077462A	2011-04-14

Other References: