PATTERN DIMENSION MEASUREMENT METHOD AND CHARGED PARTICLE BEAM MICROSCOPE USED IN SAME

WIPO Patent Application WO/2011/052339

A1

Disclosed is a pattern dimension measurement method with minimal measurement error and excellent repeatability even if a shift in focus occurs. Also disclosed is a charged particle beam microscope used in the same. The method measures particle dimensions from the distribution of the signal strength of charged signal particles from a sample, upon which a pattern has been formed, by irradiating the sample with a charged particle beam, wherein the left and right edge index positions (X1, X2) of the maximum strength position of a signal, which correspond to the pattern edge, are calculated by means of the threshold method, and the pattern edge position (Xe) is obtained from the average value thereof. As a result, the influence of a shift in focus at the pattern edge position (Xe) can be reduced.

WO/2004/008255	METHOD AND APPARATUS FOR MEASURING CRITICAL DIMENSIONS WITH A PARTICLE BEAM
JP3994543	Thin film measuring method and thin film measuring device

HITOMI KEIICHIRO (JP)
NAKAYAMA YOSHINORI (JP)
TANAKA JUNICHI (JP)

PCT/JP2010/067107

May 05, 2011

September 30, 2010

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HITACHI HIGH TECH CORP (JP)
HITOMI KEIICHIRO (JP)
NAKAYAMA YOSHINORI (JP)
TANAKA JUNICHI (JP)

G01B15/00

JP2009198338A	2009-09-03
JP2009243993A	2009-10-22
JPH0560540A	1993-03-09
JPS61265517A	1986-11-25
JP2001147113A	2001-05-29

POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)

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