Title:
PATTERN DIMENSION MEASURING METHOD AND SCANNING ELECTRON MICROSCOPE USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/052855
Kind Code:
A1
Abstract:
Provided is a technology of performing more highly accurate semiconductor inspection by detecting a pattern edge which does not contribute as a mask in an etching step and measuring a pattern without including such edge at the time of calculating dimensions. Since a pattern portion having a protruding shape is to be removed at the time of etching, a scanning electron microscope image is acquired such that the protruding edge not functioning as a mask is to be excluded at the time of calculating dimensions in pattern inspection. Then, the shape of the pattern edge is calculated, the portion of the protruding edge is corrected, and pattern dimensions mainly obtained from recessed edges are calculated.
Inventors:
HITOMI KEIICHIRO (JP)
NAKAYAMA YOSHINORI (JP)
NAKAYAMA YOSHINORI (JP)
Application Number:
PCT/JP2009/005695
Publication Date:
May 14, 2010
Filing Date:
October 28, 2009
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
HITOMI KEIICHIRO (JP)
NAKAYAMA YOSHINORI (JP)
HITOMI KEIICHIRO (JP)
NAKAYAMA YOSHINORI (JP)
International Classes:
G01B15/04; G01N23/225; H01J37/22; H01J37/28; H01L21/027; H01L21/66
Foreign References:
| JP2006215020A | 2006-08-17 | |||
| JP2006038779A | 2006-02-09 | |||
| JP2005038976A | 2005-02-10 | |||
| JP2004349704A | 2004-12-09 | |||
| JP2003269943A | 2003-09-25 |
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
Polaire Intellectual Property Corporation (JP)
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