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Title:
CHARGED PARTICLE BEAM APPARATUS
Document Type and Number:
WIPO Patent Application WO/2010/052854
Kind Code:
A1
Abstract:
It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process.  At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam.  Thus, contrast of an image is improved and inspection is performed with high sensitivity.

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Inventors:
TSUNO NATSUKI (JP)
MAKINO HIROSHI (JP)
Application Number:
PCT/JP2009/005694
Publication Date:
May 14, 2010
Filing Date:
October 28, 2009
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP (JP)
TSUNO NATSUKI (JP)
MAKINO HIROSHI (JP)
International Classes:
H01L21/66; H01J37/20; H01J37/28
Foreign References:
JP2000340160A2000-12-08
JP2003151483A2003-05-23
JP2007071804A2007-03-22
JPS5798840A1982-06-19
Attorney, Agent or Firm:
POLAIRE I. P. C. (JP)
Polaire Intellectual Property Corporation (JP)
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