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Title:
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2023/004609
Kind Code:
A1
Abstract:
In certain aspects, a memory device includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells. Each one of the plurality of memory cells is disposed at an intersection of a respective one of the plurality of bit lines and a respective one of the plurality of word lines. Each one of the plurality of memory cells includes stacked a phase-change memory (PCM) element and a selector. The PCM element includes a top surface and a bottom surface. An area of the top surface is smaller than that of the bottom surface.

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Inventors:
PENG WENLIN (CN)
LIU JUN (CN)
YANG HAIBO (CN)
LIU GUANGYU (CN)
KUANG RUI (CN)
Application Number:
PCT/CN2021/108810
Publication Date:
February 02, 2023
Filing Date:
July 28, 2021
Export Citation:
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Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
H01L45/00; H01L27/24
Foreign References:
CN112041997A2020-12-04
CN102667946A2012-09-12
CN1449021A2003-10-15
CN101047230A2007-10-03
US20030116794A12003-06-26
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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