PHASE-CHANGE MEMORY DEVICES, SYSTEMS, AND METHODS OF OPERATING THEREOF

Title:

PHASE-CHANGE MEMORY DEVICES, SYSTEMS, AND METHODS OF OPERATING THEREOF

Document Type and Number:

WIPO Patent Application WO/2023/272550

Kind Code:

A1

Abstract:

In certain aspects, a memory device includes a bit line, a plurality of memory cells coupled with the bit line, and N selectors, where N is a positive integer greater than 1, and N word lines. Each one of the plurality of memory cells includes N phase-change memory (PCM) elements. Each one of the N selectors is coupled with a respective one of the N PCM elements. Each one of the N word lines is coupled with a respective one of the N selectors.

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Inventors:

PAN XUWEN (CN)

Application Number:

PCT/CN2021/103403

Publication Date:

January 05, 2023

Filing Date:

June 30, 2021

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Assignee:

YANGTZE MEMORY TECH CO LTD (CN)

International Classes:

G11C13/00

Foreign References:

US20210111342A1	2021-04-15
US20210111341A1	2021-04-15
US20180315474A1	2018-11-01
US20060197115A1	2006-09-07

Attorney, Agent or Firm:

NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)

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