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Title:
PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2023/103444
Kind Code:
A1
Abstract:
The present application relates to the technical field of integrated circuits, and in particular to a photodetector. The photodetector comprises: a waveguide layer; an absorption layer, the absorption layer being located on the upper surface of the waveguide layer or at least partially embedded in the waveguide layer; and a cladding material, the cladding material covering the tops and sidewalls of the waveguide layer and the absorption layer; wherein at least one end face of the photodetector is a light incident surface, and the thickness of the end face of the absorption layer close to the light incident surface is smaller than the thicknesses of remaining portion. According to the present application, since the thickness of the end face of the absorption layer close to the light incident surface is smaller than the thicknesses of the remaining portion, the light energy absorbed by the portion close to the light incident surface is less than the light energy absorbed by the remaining portion of the absorption layer, thereby reducing the degree of aggregation of photon-generated carriers in an intrinsic region of the photodetector, increasing the electric field intensity of a photon-generated carrier aggregation region, reducing the influence of large-light input on the bandwidth and responsivity performance of the photodetector, and finally improving a large-light input threshold of the photodetector.

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Inventors:
WU HAO (CN)
ZHENG XUEZHE (CN)
Application Number:
PCT/CN2022/113315
Publication Date:
June 15, 2023
Filing Date:
August 18, 2022
Export Citation:
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Assignee:
INNOLIGHT TECH SUZHOU LTD (CN)
International Classes:
H01L31/0232; H01L31/0352; H01L31/105
Foreign References:
CN114171613A2022-03-11
CN114171614A2022-03-11
JPH09139520A1997-05-27
CN113437160A2021-09-24
US20050053349A12005-03-10
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