Title:
PHOTODETECTOR
Document Type and Number:
WIPO Patent Application WO/2024/004175
Kind Code:
A1
Abstract:
A photodetector according to the present invention is a photodetector including a photodiode (300) and a protection diode (301), wherein the photodiode (300) and the protection diode (301) are integrated on the same semiconductor substrate, the photodiode (300) includes a semiconductor portion made of at least one type of semiconductor material, an anode electrode, and a cathode electrode, the protection diode (301) includes a core layer, a semiconductor portion including a first type semiconductor region doped with first type impurity ions and a second type semiconductor region doped with second type impurity ions provided in the core layer, an anode electrode, and a cathode electrode, the semiconductor portion of the protection diode (301) is made of only one type of material among semiconductor materials used for the semiconductor portion of the photodiode (300), the anode electrode of the protection diode (301) and the anode electrode of the photodiode (300) are connected, and the cathode electrode of the protection diode (301) and the cathode electrode of the photodiode (300) are connected.
Inventors:
HINAKURA YOSUKE (JP)
HONDA KENTARO (JP)
KIKUCHI KIYOFUMI (JP)
IKUMA YUICHIRO (JP)
HONDA KENTARO (JP)
KIKUCHI KIYOFUMI (JP)
IKUMA YUICHIRO (JP)
Application Number:
PCT/JP2022/026391
Publication Date:
January 04, 2024
Filing Date:
June 30, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L31/10; G02B6/12
Domestic Patent References:
| WO2019220891A1 | 2019-11-21 |
Foreign References:
| US20180019239A1 | 2018-01-18 | |||
| US20180348428A1 | 2018-12-06 | |||
| US20170317116A1 | 2017-11-02 |
Attorney, Agent or Firm:
TANI & ABE, P.C. (JP)
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