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Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE CAPTURE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/150989
Kind Code:
A1
Abstract:
A photoelectric conversion element according to an embodiment of the present invention includes: a first electrode comprising a plurality of mutually independent electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer which includes quantum dots and is disposed between the first electrode and the second electrode; and a semiconductor layer which includes an oxide semiconductor material and is disposed between the first electrode and the photoelectric conversion layer. The conduction band of the photoelectric conversion layer has an energy level equal to or lower than the energy level of the conduction band of the semiconductor layer.

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Inventors:
SHIOMI MICHINORI (JP)
MORIWAKI TOSHIKI (JP)
Application Number:
PCT/JP2019/001439
Publication Date:
August 08, 2019
Filing Date:
January 18, 2019
Export Citation:
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Assignee:
SONY CORP (JP)
International Classes:
H01L31/10; H01L27/146; H04N5/369; H04N5/374
Foreign References:
US9099663B12015-08-04
US20150318119A12015-11-05
US20170233645A12017-08-17
JP2017516320A2017-06-15
JP2014124715A2014-07-07
JP2017157816A2017-09-07
Other References:
IM, S. H. ET AL.: "Near-infrared photodetection based on PbS colloidal quantum dots/organic hole conductor", ORGANIC ELECTRONICS, vol. 11, no. 4, 4 January 2010 (2010-01-04), pages 696 - 699, XP026933282, doi:10.1016/j.orgel.2009.12.021
LIU, H. ET AL.: "Electron Acceptor Materials Engineering in Colloidal Quantum Dot Solar Cells", ADVANCED MATERIALS, vol. 23, 14 July 2011 (2011-07-14), pages 3832 - 3837, XP055628426
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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