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Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/124334
Kind Code:
A1
Abstract:
Provided is a plasma processing method comprising a) a step for providing a substrate, having a silicon-containing film and a mask on the silicon-containing film, on a substrate support portion in a plasma processing chamber, b) a step for supplying processing gas into the plasma processing chamber, c) a step for periodically supplying a pulse voltage to the substrate support portion, and d) a step for periodically supplying RF power, using the RF power to generate plasma from the processing gas, and etching the silicon-containing film, wherein: the pulse voltage has a negative polarity; in c), a first period in which a first pulse voltage is supplied and a second period in which the pulse voltage having a negative polarity is not supplied or a second pulse voltage of which the absolute value is smaller than the first pulse voltage is supplied are repeated; in d), a third period in which a first RF power is supplied and a fourth period in which the RF power is not supplied or a second RF power smaller than the first RF power is supplied are repeated; and the first period is started before the start of the third period.

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Inventors:
SASAKI HIKOICHIRO (JP)
GUO SHIRONG (JP)
IKEDA TAKENOBU (JP)
KON YOSHIMITSU (JP)
Application Number:
PCT/JP2021/045132
Publication Date:
June 16, 2022
Filing Date:
December 08, 2021
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
WO2020145051A12020-07-16
WO2018084186A12018-05-11
Foreign References:
JP2014022482A2014-02-03
JP2020507922A2020-03-12
KR101585945B12016-01-18
JP2015095493A2015-05-18
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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