Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/033754
Kind Code:
A1
Abstract:
Provided is a plasma processing method by which a body to be processed, in which an organic film, a mask film, and a resist film are stacked in the stated order, is processed by plasma, wherein the plasma processing method has the following: a step in which the body to be processed having a prescribed pattern formed on the resist film is conveyed into a chamber, and supplied into the chamber is a reforming gas that is H2 gas, halogenated hydrogen gas, or a mixed gas including halogenated hydrogen gas or a noble gas and H2 gas; and a reforming step for reforming the resist film of the body to be processed using a plasma of the reforming gas at a processing temperature of -20°C or less.

Inventors:
OGAWA SHUHEI (JP)
PARK WANJAE (JP)
KIHARA YOSHIHIDE (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2016/073648
Publication Date:
March 02, 2017
Filing Date:
August 10, 2016
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Foreign References:
JP2014082475A2014-05-08
JP2000221698A2000-08-11
JP2005072518A2005-03-17
JP2005243681A2005-09-08
JPH06168918A1994-06-14
JP2009267352A2009-11-12
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
Download PDF: