POROUS OXIDE SEMICONDUCTOR PARTICLES

WIPO Patent Application WO/2022/102333

A1

These porous oxide semiconductor particles are equipped with a beaded structure in which porous primary particles comprising an aggregate of crystallites of an oxide semiconductor are linked, and the porous oxide semiconductor particles comprise particles with a specific surface area of 60 m2/g or more. The pore diameter of the porous oxide semiconductor particles is preferably 1-20 nm. The tap density of the porous oxide semiconductor particles is preferably at least 0.005 g/cm3 and no more than 1.0 g/cm3. The oxide semiconductor is preferably SnO2 or SnO2 doped with one or more elements selected from the group consisting of Nb, Sb, W, Ta, and Al.

INABA MASANORI (JP)
YANO KAZUHISA (JP)
TAKESHITA TOMOHIRO (JP)
KODAMA KENSAKU (JP)
SUZUKI TOSHIYUKI (JP)

PCT/JP2021/038012

May 19, 2022

October 14, 2021

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TOYOTA CHUO KENKYUSHO KK (JP)
TOYOTA MOTOR CO LTD (JP)

C01G19/02; C01G19/00; C01G30/00; C01G33/00; C01G35/00; C01G41/00; H01M4/86; H01M8/10

WO2012096171A1

2012-07-19

JP2013127869A	2013-06-27
JP2005056787A	2005-03-03
JP2011111379A	2011-06-09
JP2014532029A	2014-12-04
JP2011519817A	2011-07-14

KAKINUMA KATSUYOSHI, SUDA KOHEI, KOBAYASHI RYO, TANO TETSURO, ARATA CHISATO, AMEMIYA ISAO, WATANABE SUMITAKA, MATSUMOTO MASASHI, I: "Electronic States and Transport Phenomena of Pt Nanoparticle Catalysts Supported on Nb-Doped SnO 2 for Polymer Electrolyte Fuel Cells", APPLIED MATERIALS & INTERFACES, vol. 11, no. 38, 25 September 2019 (2019-09-25), US , pages 34957 - 34963, XP055929383, ISSN: 1944-8244, DOI: 10.1021/acsami.9b11119

HATAKEYAMA Fumio (JP)

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