POWER CONVERSION DEVICE, CONTROL METHOD FOR POWER CONVERSION DEVICE, SEMICONDUCTOR DEVICE, AND CONTROL METHOD FOR SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/219135

A1

A power conversion device according to the present invention converts power using a semiconductor device, and is characterized by comprising: a MOS control diode 1 that has an n+ layer 11, an n- layer 12, a p- layer 13, a p+ layer 14, a cathode electrode 21, anode electrodes 22, 220, and a gate electrode 23; and a voltage imparting means that applies a forward bias voltage across the anode electrodes 22, 220 and the cathode electrode 21 during forward bias, applies a reverse bias voltage across the anode electrodes 22, 220 and the cathode electrode 21 during reverse recovery, and, before the reverse recovery, sets the potential of the gate electrode 23 to a potential for forming an inversion layer in a third semiconductor layer relative to the potential of the anode electrodes 22, 220. The present invention thereby provides a power conversion device, a control method for the power conversion device, a semiconductor device, and a control method for the semiconductor device that are capable of further reducing power loss.

MORI MUTSUHIRO (JP)
KANNO YUSUKE (JP)
FURUKAWA TOMOYASU (JP)
MIYOSHI TOMOYUKI (JP)

PCT/JP2023/017766

November 16, 2023

May 11, 2023

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HITACHI LTD (JP)

H01L29/78; H01L29/739; H01L29/861; H01L29/868; H01L29/872

WO2011080928A1	2011-07-07
WO2008069145A1	2008-06-12

JP2022016286A	2022-01-21
JP2021180262A	2021-11-18
JP2019216223A	2019-12-19
JP2018117044A	2018-07-26
JP2016167539A	2016-09-15
US20160260809A1	2016-09-08
US20140021484A1	2014-01-23

SUNNEXT INTERNATIONAL PATENT OFFICE (JP)

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