PREPARATION METHOD FOR THROUGH-SILICON VIA HAVING HIGH ASPECT RATIO AND ELECTRONIC ELECTROPLATING CHIP HAVING SAME

Title:

PREPARATION METHOD FOR THROUGH-SILICON VIA HAVING HIGH ASPECT RATIO AND ELECTRONIC ELECTROPLATING CHIP HAVING SAME

Document Type and Number:

WIPO Patent Application WO/2024/066309

Kind Code:

A1

Abstract:

The present application relates to an electronic electroplating chip having a through-silicon via which has a high aspect ratio and a preparation method. The method comprises the following steps: S1: coating a photoresist on a surface of a silicon substrate, and developing and exposing a hole site after photoetching exposure; S2: covering part of the exposed hole site of the silicon substrate by using a passivation layer; S3: etching the bottom surface of the passivation layer, and exposing the silicon substrate corresponding to the bottom surface of the hole site; S4: etching the silicon substrate corresponding to the bottom surface exposing the hole site; S5: repeating steps S2-S4 multiple times to obtain a through-silicon via of a target depth, and cleaning and performing ashing on residual photoresist and passivation substances in the through-silicon via; and S6: depositing an insulating layer, a barrier layer and a seed layer on an inner wall of the through-silicon via by means of an ALD deposition method to obtain a through-silicon via which has a high aspect ratio. Passivation-etching-etching is repeated by means of a three-pulse process to solve the balancing problem of etching and passivation when modifying the process and ensure the stability of the process. Finally, once ALD is selected to carry out a side wall deposition process, it is ensured that the inner side wall of the via has enough coverage capability.

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Inventors:

LIU JUNYANG (CN)
ZHAO JIAOYANG (CN)
LIU WENQING (CN)
ZHAO YI (CN)
HONG WENJING (CN)

Application Number:

PCT/CN2023/089762

Publication Date:

April 04, 2024

Filing Date:

April 21, 2023

Export Citation:

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Assignee:

UNIV XIAMEN (CN)

International Classes:

H01L21/768; H01L21/02; H01L23/48

Foreign References:

CN115394710A	2022-11-25
CN103390581A	2013-11-13
CN101962773A	2011-02-02
CN111769097A	2020-10-13
CN101800175A	2010-08-11

Attorney, Agent or Firm:

CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)

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