PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

Title:

PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2010/101054

Kind Code:

A1

Abstract:

Disclosed is a process for producing a semiconductor device, which comprises the steps of: forming a diffusion-preventing mask (2, 21) on the surface of a semiconductor substrate (1); applying a dopant-diffusing agent (3, 4) comprising a first or second electrically conductive dopant on a part of the surface of the semiconductor substrate (1) which is positioned apart from the diffusion-preventing mask (2, 21) by a predetermined distance; and diffusing the dopant from the dopant-diffusing agent (3, 4) in the semiconductor substrate (1) to form a dopant-diffusing layer (5, 6, 16, 17).

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Inventors:

KOHIRA MASATSUGU
FUNAKOSHI YASUSHI

Application Number:

PCT/JP2010/052850

Publication Date:

September 10, 2010

Filing Date:

February 24, 2010

Export Citation:

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Assignee:

SHARP KK (JP)
KOHIRA MASATSUGU
FUNAKOSHI YASUSHI

International Classes:

H01L31/04; H01L21/225

Domestic Patent References:

WO2007081510A2	2007-07-19
WO2007081510A2	2007-07-19

Foreign References:

JP2008311291A	2008-12-25
JP2008186927A	2008-08-14
JP2007134655A	2007-05-31
JP2008078665A	2008-04-03

Attorney, Agent or Firm:

FUKAMI, Hisao et al. (JP)
Hisao Fukami (JP)

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