Title:
RESIST PATTERN FORMATION METHOD, RESIST LATENT IMAGE FORMATION DEVICE, AND RESIST MATERIAL
Document Type and Number:
WIPO Patent Application WO/2015/178464
Kind Code:
A1
Abstract:
This resist pattern formation method includes a resist layer formation step, a pattern exposure step, a flood exposure step, and a development step. In the resist layer formation step, a resist layer containing a base resin, a sensitizer precursor, an acid generator, and a base generator is formed on a substrate. In the pattern exposure step, the resist layer is subjected to pattern exposure, and a sensitizer is generated from the sensitizer precursor. In the flood exposure step, after the pattern exposure, the resist layer in which the sensitizer is generated is subjected to flood exposure, acid is generated from the acid generator, and a base is formed from the base generator; and in the development step, after the flood exposure, the resist layer is developed.
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Inventors:
TAGAWA SEIICHI (JP)
Application Number:
PCT/JP2015/064649
Publication Date:
November 26, 2015
Filing Date:
May 21, 2015
Export Citation:
Assignee:
UNIV OSAKA (JP)
International Classes:
G03F7/38; G03F7/004; G03F7/039; H01L21/027
Foreign References:
| JP2011252967A | 2011-12-15 | |||
| JP2012008223A | 2012-01-12 | |||
| JPH04363014A | 1992-12-15 | |||
| JPH09292707A | 1997-11-11 | |||
| JP2013084961A | 2013-05-09 |
Attorney, Agent or Firm:
MAEI Hiroyuki (JP)
Hiroyuki Maei (JP)
Hiroyuki Maei (JP)
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