RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING PYRROLE NOVOLAC RESIN

Title:

RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING PYRROLE NOVOLAC RESIN

Document Type and Number:

WIPO Patent Application WO/2014/208499

Kind Code:

A1

Abstract:

[Problem] To provide an excellent resist underlayer film which has a dry etching rate selectivity close to that of a resist, a dry etching rate selectivity lower than that of a resist, or a dry etching rate selectivity lower than that of a semiconductor substrate. [Solution] A resist underlayer film forming composition which contains a polymer that has a unit structure represented by formula (1). (In formula (1), R3 represents a hydrogen atom, a halogen group, a nitro group, an amino group, a carbonyl group, an aryl group having 6-40 carbon atoms, or an aryl group having 6-40 carbon atoms or heterocyclic group which may be substituted by a hydroxy group; R4 represents a hydrogen atom, a halogen group, a nitro group, an amino group, or an alkyl group having 1-10 carbon atoms, aryl group having 6-40 carbon atoms or heterocyclic group which may be substituted by a hydroxy group; R3 and R4 may combine to form a ring together with carbon atoms to which R3 and R4 are bonded; and n represents an integer of 0-2.) In formula (1), R3 is a benzene ring, a naphthalene ring, an anthracene ring or a pyrene ring, and R4 is a hydrogen atom.

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Inventors:

SHINJO TETSUYA (JP)
SOMEYA YASUNOBU (JP)
KARASAWA RYO (JP)
NISHIMAKI HIROKAZU (JP)
ENDO TAKAFUMI (JP)
HASHIMOTO KEISUKE (JP)

Application Number:

PCT/JP2014/066560

Publication Date:

December 31, 2014

Filing Date:

June 23, 2014

Export Citation:

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Assignee:

NISSAN CHEMICAL IND LTD (JP)

International Classes:

G03F7/11; C08G12/26; C08G16/02; G03F7/26

Domestic Patent References:

WO2010147155A1	2010-12-23
WO2013047516A1	2013-04-04

Foreign References:

EP1505095A1	2005-02-09
JP2001354674A	2001-12-25

Attorney, Agent or Firm:

HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)

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