Title:
RESONANT-TUNNELING DIODE AND TERAHERTZ OSCILLATOR
Document Type and Number:
WIPO Patent Application WO/2023/189674
Kind Code:
A1
Abstract:
Provided is a resonant-tunneling diode and a terahertz oscillator enabling further performance improvement. The resonant-tunneling diode comprises: a multiple quantum well structure composed of a group III nitride semiconductor; a first electrode connected to one side of the multiple quantum well structure; and a second electrode connected to the other side of the multiple quantum well structure. The multiple quantum well structure has, arranged in order from the first electrode toward the second electrode, a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, and a third barrier layer. The first barrier layer, the second barrier layer, and the third barrier layer have a thickness such that carriers may pass therethrough due to the tunneling effect. Each of the first quantum well layer and the second quantum well layer has a potential gradient caused by spontaneous polarization, or the sum of spontaneous polarization and piezoelectric polarization, and the quantum well layers have different thicknesses from each other. The first quantum well layer and the second quantum well layer have compositions that have different potential energy sizes from each other.
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Inventors:
MURAYAMA MASAHIRO (JP)
KOYAMA TAKAHIRO (JP)
KOYAMA TAKAHIRO (JP)
Application Number:
PCT/JP2023/010416
Publication Date:
October 05, 2023
Filing Date:
March 16, 2023
Export Citation:
Assignee:
SONY GROUP CORP (JP)
International Classes:
H01L29/88; H01L21/329; H01L21/822; H01L27/04; H01L29/06; H01L29/205; H01L29/66; H03B7/08
Foreign References:
| JP2016134609A | 2016-07-25 | |||
| JP2006147518A | 2006-06-08 |
Other References:
CHEN HAORAN, YANG LIN'AN, HAO YUE: "Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes", JOURNAL OF APPLIED PHYSICS, vol. 116, no. 7, 21 August 2014 (2014-08-21), XP093097628, ISSN: 0021-8979, DOI: 10.1063/1.4893561
RONG TAOTAO, YANG LIN-AN, ZHAO ZIYUE, ZHANG KAI, HAO YUE: "Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures", PHYSICA STATUS SOLIDI. A: APPLICATIONS AND MATERIALS SCIENCE, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 216, no. 23, 1 December 2019 (2019-12-01), DE , XP093097643, ISSN: 1862-6300, DOI: 10.1002/pssa.201900471
RONG TAOTAO, YANG LIN-AN, ZHAO ZIYUE, ZHANG KAI, HAO YUE: "Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures", PHYSICA STATUS SOLIDI. A: APPLICATIONS AND MATERIALS SCIENCE, WILEY - V C H VERLAG GMBH & CO. KGAA, DE, vol. 216, no. 23, 1 December 2019 (2019-12-01), DE , XP093097643, ISSN: 1862-6300, DOI: 10.1002/pssa.201900471
Attorney, Agent or Firm:
TANAKA Hidetetsu et al. (JP)
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