Title:
SCHOTTKY BARRIER DIODE
Document Type and Number:
WIPO Patent Application WO/2018/159350
Kind Code:
A1
Abstract:
Provided is a Schottky barrier diode which is configured from a Ga2O3-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga2O3-based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.
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Inventors:
SASAKI KOHEI (JP)
WAKIMOTO DAIKI (JP)
KOISHIKAWA YUKI (JP)
THIEU QUANG TU (JP)
WAKIMOTO DAIKI (JP)
KOISHIKAWA YUKI (JP)
THIEU QUANG TU (JP)
Application Number:
PCT/JP2018/005665
Publication Date:
September 07, 2018
Filing Date:
February 19, 2018
Export Citation:
Assignee:
TAMURA SEISAKUSHO KK (JP)
NOVEL CRYSTAL TECH INC (JP)
NOVEL CRYSTAL TECH INC (JP)
International Classes:
H01L21/329; H01L29/872; H01L29/06; H01L29/47
Domestic Patent References:
| WO2016013554A1 | 2016-01-28 |
Foreign References:
| JP2006352006A | 2006-12-28 | |||
| JP2008521226A | 2008-06-19 | |||
| JP2009017702A | 2009-01-22 |
Other References:
KOHEI SASAKI ET AL.: "Ga 0 Schottky Barrier Diodes Fabricated by Using Single-Crystal P-Ga 03 (010) Substrates", IEEE ELECTRON DEVICE LETTERS, vol. 34, no. 4, April 2013 (2013-04-01), pages 493 - 495, XP011497999, doi:10.1109/LED.2013.2244057
TOSHIYUKI OISHI ET AL.: "Conduction mechanism in highly doped P-GazOa (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 2016, pages 030305
T. SHIMIZU ET AL., PROCEEDINGS OF 2001 INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, pages 243 - 246
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3591711A4
TOSHIYUKI OISHI ET AL.: "Conduction mechanism in highly doped P-GazOa (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 55, 2016, pages 030305
T. SHIMIZU ET AL., PROCEEDINGS OF 2001 INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, pages 243 - 246
V. KHEMKA ET AL., IEEE ELECTRON DEVICE LETTERS, vol. 21, no. 5, May 2000 (2000-05-01), pages 286 - 288
HIROYUKI MATSUNAMINOBORU OTANITSUNENOBU KIMOTOTAKASHI NAKAMURA: "Technology of Semiconductor SiC and its Application", 30 September 2011, NIKKAN KOGYO SHIMBUN, LTD., pages: 355
See also references of EP 3591711A4
Attorney, Agent or Firm:
TAMURA CORPORATION (JP)
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