Title:
SCHOTTKY DIODE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/178914
Kind Code:
A1
Abstract:
A Schottky diode and a manufacturing method therefor. The Schottky diode comprises: a semiconductor substrate layer; a drift layer located on the semiconductor substrate layer, the drift layer comprising a first drift area and a second drift area located on a side of the first drift area facing away from the semiconductor substrate layer, and the doping concentration of the second drift area being greater than that of the first drift area; a secondary doped layer located in part of the second drift area, the conductivity type of the secondary doped layer being opposite to that of the drift layer; a plurality of primary doped layers located in the drift layer and distributed around the secondary doped layer at intervals, the conductivity type of the primary doped layers being the same as that of the secondary doped layer. The Schottky diode ensures complete pinch-off of a conduction channel under a low reverse bias voltage while ensuring a low on-resistance during forward conduction.
More Like This:
Inventors:
ZHANG YUANLAN (CN)
ZHANG QINGCHUN JON (CN)
ZHANG QINGCHUN JON (CN)
Application Number:
PCT/CN2021/079252
Publication Date:
September 01, 2022
Filing Date:
March 05, 2021
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/36
Foreign References:
| CN104347685A | 2015-02-11 | |||
| US20090224354A1 | 2009-09-10 | |||
| CN109037356A | 2018-12-18 | |||
| US20170271528A1 | 2017-09-21 | |||
| CN111668313A | 2020-09-15 | |||
| US20210036165A1 | 2021-02-04 |
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
Download PDF: