Title:
SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189164
Kind Code:
A1
Abstract:
This semiconductor device comprises an insulating film covering an electrode and a base surface of a semiconductor substrate. The insulating film has a first upper surface and a protrusion protruding from the first upper surface, respectively corresponding to the base surface of the semiconductor substrate and at least a portion of the electrode protruding from the base surface. The distance between a connecting portion connecting the base surface of the semiconductor substrate and the first upper surface and the surface of the protrusion of the insulating film is equal to or more than the distance between the base surface of the substrate and a second upper surface of the electrode.
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Inventors:
NAKATA KAZUNARI (JP)
Application Number:
PCT/JP2023/007772
Publication Date:
October 05, 2023
Filing Date:
March 02, 2023
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Domestic Patent References:
| WO2016114057A1 | 2016-07-21 | |||
| WO2019171678A1 | 2019-09-12 |
Foreign References:
| JP2010171057A | 2010-08-05 | |||
| JPH0629487A | 1994-02-04 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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