Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2019/044705
Kind Code:
A1
Abstract:
A nonvolatile memory device 1 comprises: a semiconductor substrate 3; a memory array area 5 having a plurality of memory cells 13, a plurality of straight word lines 11 which follow along a plane at a height h1 above the semiconductor substrate 3, and a plurality of straight bit lines 15 which are formed along a plane at a height h2 above the semiconductor substrate 3 in the direction intersecting with the word lines 11, wherein the plurality of memory cells 13 are provided between the plurality of bit lines 15 and intersections 17 at which the plurality of word lines 11 and the plurality of bit lines 15 respectively intersect; and a periphery circuit area 7 having a plurality of straight linear electrodes 19 formed along the plane at the height h1 above the semiconductor substrate 3, a plurality of straight linear electrodes 21 formed in a direction intersecting with the linear electrodes 19 along the plane at the height h2 above the semiconductor substrate 3, and insulating bodies 23 positioned at least between the linear electrodes 19 and the linear electrodes 21.
Inventors:
TANZAWA TORU (JP)
Application Number:
PCT/JP2018/031369
Publication Date:
March 07, 2019
Filing Date:
August 24, 2018
Export Citation:
Assignee:
UNIV SHIZUOKA NAT UNIV CORP (JP)
International Classes:
H01L21/822; H01L27/04; H01L27/10
Foreign References:
| JP2016100387A | 2016-05-30 | |||
| JP2008288372A | 2008-11-27 | |||
| JP2012204394A | 2012-10-22 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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