Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, SOLID-STATE IMAGE PICKUP ELEMENT, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2016/190059
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor device, a manufacturing method, a solid-state image pickup element, and an electronic apparatus, wherein reliability is further improved. In interlayer films that are respectively provided in a wiring layer of a sensor substrate, in which a sensor surface having pixels is formed, and in a wiring layer of a signal processing substrate that performs signal processing with respect to the sensor substrate, connecting pads for electrically connecting the sensor substrate and the signal processing substrate to each other are formed. Then, metal oxide films are formed between the interlayer films of the sensor substrate and the signal processing substrate, between the connecting pads formed on the sensor substrate side, and the interlayer film on the signal processing substrate side, and between the connecting pads formed on the signal processing substrate side, and the interlayer film on the sensor substrate side. The present art can be applied to, for instance, a laminated CMOS image sensor.
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Inventors:
FUJII NOBUTOSHI (JP)
HANEDA MASAKI (JP)
HANEDA MASAKI (JP)
Application Number:
PCT/JP2016/063630
Publication Date:
December 01, 2016
Filing Date:
May 06, 2016
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/768; H01L21/3205; H01L23/522; H01L23/532; H01L27/14; H04N5/369
Foreign References:
| JP2013168419A | 2013-08-29 | |||
| JP2015079901A | 2015-04-23 | |||
| JP2013033900A | 2013-02-14 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
Nishikawa 孝 (JP)
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