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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/105834
Kind Code:
A1
Abstract:
Provided is a semiconductor device which has a MOS gate structure and comprises: a semiconductor substrate; a first interlayer insulating film that is provided above the upper surface of the semiconductor substrate and that has a first opening; and a second interlayer insulating film that is laminated on the first interlayer insulating film and that has a second opening overlapping the first opening in a top view. The width of the first opening in a first direction is different from the width of the second opening in the first direction at the height of the boundary between the first interlayer insulating film and the second interlayer insulating film.

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Inventors:
IGUCHI KENICHI (JP)
Application Number:
PCT/JP2022/025688
Publication Date:
June 15, 2023
Filing Date:
June 28, 2022
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/06; H01L29/417; H01L29/739; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
WO2020080476A12020-04-23
Foreign References:
JP2019161167A2019-09-19
JP2012256718A2012-12-27
JP2015053308A2015-03-19
Attorney, Agent or Firm:
RYUKA & PARTNERS (JP)
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