Title:
SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2015/133290
Kind Code:
A1
Abstract:
A first injection region is formed by injecting a first dopant of a first conduction type into a surface layer portion of an IGBT section on a semiconductor substrate. A second injection region is formed by injecting a second dopant of a second conduction type into a region of the IGBT section at a shallower location than the first injection region. An amorphous third injection region is formed by injecting into the surface layer portion of a diode section a third dopant of the first conduction type at a higher concentration than the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions where the third injection region melts partially and the first dopant is activated. Thereafter, the IGBT section and the diode section are annealed with a pulsed laser beam having a short pulse-width, whereby a surface layer portion at a shallower location than the second injection region is caused to melt and crystallize in the entire region comprising the IGBT section and the diode section. This allows for an activation of the dopants in the deep regions, and a suppression of the occurrence of surface roughness.
More Like This:
Inventors:
SUZUKI TAKAOMI (JP)
SAKAMOTO MASAKI (JP)
SAKAMOTO MASAKI (JP)
Application Number:
PCT/JP2015/054614
Publication Date:
September 11, 2015
Filing Date:
February 19, 2015
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES (JP)
International Classes:
H01L29/739; H01L21/265; H01L21/336; H01L27/04; H01L29/78
Foreign References:
| JP2013197122A | 2013-09-30 | |||
| JP2012164921A | 2012-08-30 | |||
| JP2014041909A | 2014-03-06 | |||
| JP2010171057A | 2010-08-05 |
Attorney, Agent or Firm:
KITAYAMA, Mikio (JP)
Mikio Kiyama (JP)
Mikio Kiyama (JP)
Download PDF: