SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2015/068264

A1

This invention addresses the problem of using atomic layer deposition using an organic gas to provide a semiconductor device that has a desired effective work function. Said problem is solved by a semiconductor device provided with the following: a gate oxide film (102) formed on top of a silicon substrate (101); and a gate electrode formed on top of said gate oxide film (102). The gate electrode has a layered structure consisting of a carbon-containing titanium-nitride film and a polycrystalline-silicon film, and the silicon substrate (101), the gate oxide film and the carbon-containing titanium-nitride film (103), and the polycrystalline-silicon film (104) are heat-treated at a temperature of at least 350°C in a hydrogen-containing atmosphere.

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MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
LI YISUO (SG)
CHEN ZHIXIAN (SG)
CHUNG WING WAI (SG)
WIN KAY THI (SG)
WANG XINPENG (SG)

PCT/JP2013/080258

May 14, 2015

November 08, 2013

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UNISANTIS ELECT SINGAPORE PTE (SG)
MASUOKA FUJIO (JP)
NAKAMURA HIROKI (JP)
HARADA NOZOMU (JP)
LI YISUO (SG)
CHEN ZHIXIAN (SG)
CHUNG WING WAI (SG)
WIN KAY THI (SG)
WANG XINPENG (SG)

H01L21/336; H01L29/78

JP2012231123A	2012-11-22
JP2010503224A	2010-01-28
JP2013051250A	2013-03-14
JP2006024894A	2006-01-26
JP2007113103A	2007-05-10
JP2007150321A	2007-06-14
JPH08274334A	1996-10-18
JP2012253352A	2012-12-20

KIMURA MITSURU (JP)
Mitsuru Kimura (JP)

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