SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2022/230220

A1

This semiconductor device enables preventing deterioration of a ceramic laminate substrate.　A ceramic board (20) is plate shape and has a front surface and a back surface on the side opposite of the front surface, and comprises a plurality of ceramic particles. A high-potential voltage is applied to a metal layer (30), the metal layer (30) is bonded to the front surface of the ceramic board (20), is electrically connected to a semiconductor chip, and contains copper. A low-potential voltage is applied to a metal layer (40), and the metal layer (40) is connected to the back surface of the ceramic plate (20), and contains copper. An intermediate layer (50b) is formed between the back surface of the ceramic plate (20) and the metal layer (40), and contains an oxide (51b) that has magnesium, which is an oxide having magnesium. By means of the oxides (51b) having magnesium included between the ceramic plate (20) and the metal layer (40), reduction in bonding of the metal layer (40) to the ceramic plate (20) is suppressed even when a high voltage is applied at high temperature to a ceramic laminate plate (10).

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JP2017069347	SEMICONDUCTOR DEVICE

TAKAHASHI SEIICHI (JP)
SHIMODA MASAYOSHI (JP)
ISOZAKI MAKOTO (JP)

PCT/JP2021/040282

November 03, 2022

November 01, 2021

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FUJI ELECTRIC CO LTD (JP)

H01L23/12; H01L23/13; H01L23/36

WO2020115868A1	2020-06-11
WO2013008919A1	2013-01-17

JP2020007225A	2020-01-16
JP2015086085A	2015-05-07
JP2021044452A	2021-03-18
JP2000031325A	2000-01-28
JP2019127432A	2019-08-01

FUSO INTERNATIONAL PATENT FIRM (JP)

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