Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/079820
Kind Code:
A1
Abstract:
This semiconductor device is provided with: a switching element having a circuit in which a first transistor formed of a field effect transistor and a second transistor formed of an insulated gate bipolar transistor are connected in parallel; and a driver circuit configured to drive the switching element in response to an input control signal. When causing the switching element to make a transition from a first state to a second state, the driver circuit makes a difference between: a transition timing from the first state to the second state of the first transistor; and a transition timing from the first state to the second state of the second transistor. One of the first state and the second state is an off-state, and the other is an on-state.
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Inventors:
MATSUMOTO NAOKI (JP)
Application Number:
PCT/JP2022/032511
Publication Date:
May 11, 2023
Filing Date:
August 30, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H02M1/08; H03K17/60; H03K17/687
Domestic Patent References:
| WO2016103328A1 | 2016-06-30 |
Foreign References:
| JP2020108225A | 2020-07-09 | |||
| JP2018157712A | 2018-10-04 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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