Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/281969
Kind Code:
A1
Abstract:
This semiconductor device comprises: a chip having a main surface; a channel region of a first conductivity type formed in a surface layer part of the main surface; a drift region of a second conductivity type formed in the surface layer part of the main surface so as to be adjacent to the channel region; a gate insulating film covering the channel region and the drift region on the main surface; and a polysilicon gate having a first portion of the second conductivity type facing the channel region with the gate insulating film interposed therebetween, and a second portion of the first conductivity type facing the drift region with the gate insulating film interposed therebetween and forming a pn junction with the first portion.
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Inventors:
SHIMIZU YUSUKE (JP)
Application Number:
PCT/JP2022/023165
Publication Date:
January 12, 2023
Filing Date:
June 08, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L29/861; H01L29/868
Foreign References:
| JP2017079432A | 2017-04-27 | |||
| JP2009212237A | 2009-09-17 | |||
| US20130161750A1 | 2013-06-27 | |||
| JP2014183231A | 2014-09-29 |
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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