Title:
SEMICONDUCTOR DIODE
Document Type and Number:
WIPO Patent Application WO/2022/254999
Kind Code:
A1
Abstract:
A semiconductor diode (100) comprises: a P-type semiconductor (1); an N-type semiconductor (2) that has a band gap smaller than that of the P-type semiconductor (1); and an insulator (3) that is provided between the P-type semiconductor (1) and the N-type semiconductor (2) and that has a band gap greater than those of the P-type semiconductor (1) and the N-type semiconductor (2), wherein the band gap difference between the P-type semiconductor (1) and the N-type semiconductor (2) is 1 eV or more, and the band gap difference between the P-type semiconductor (1) and the insulator (3) is 1 eV or less.
More Like This:
Inventors:
NAKAJIMA JUNJI (JP)
DEGAWA AKIMICHI (JP)
OKAMURA JUN-ICHI (JP)
DEGAWA AKIMICHI (JP)
OKAMURA JUN-ICHI (JP)
Application Number:
PCT/JP2022/018621
Publication Date:
December 08, 2022
Filing Date:
April 22, 2022
Export Citation:
Assignee:
POWER IV INC (JP)
International Classes:
H01L29/868; H01L29/861
Domestic Patent References:
| WO2013122084A1 | 2013-08-22 |
Foreign References:
| JP2016039277A | 2016-03-22 | |||
| CN108281496A | 2018-07-13 |
Other References:
FARES CHAKER; KNEIß MAX; VON WENCKSTERN HOLGER; GRUNDMANN MARIUS; TADJER MARKO; REN FAN; LAMBERS ERIC; PEARTON S. J.: "Valence band offsets for ALD SiO2and Al2O3on (InxGa1−x)2O3for x = 0.25–0.74", APL MATERIALS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 7, no. 7, 31 July 2019 (2019-07-31), 2 Huntington Quadrangle, Melville, NY 11747 , XP012239513, DOI: 10.1063/1.5110498
SUGIURA MASANORI, URAGOU KAZUYUKI, TACHIKI MINORU, KOBAYASHI TAKESHI: "Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 90, no. 1, 1 July 2001 (2001-07-01), 2 Huntington Quadrangle, Melville, NY 11747, pages 187 - 191, XP012053441, ISSN: 0021-8979, DOI: 10.1063/1.1334638
SUGIURA MASANORI, URAGOU KAZUYUKI, TACHIKI MINORU, KOBAYASHI TAKESHI: "Estimation of trap levels in SrTiO3 epitaxial films from measurement of (LaSr)MnO3/SrTiO3/(LaSr)TiO3 p-i-n diode characteristics", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 90, no. 1, 1 July 2001 (2001-07-01), 2 Huntington Quadrangle, Melville, NY 11747, pages 187 - 191, XP012053441, ISSN: 0021-8979, DOI: 10.1063/1.1334638
Attorney, Agent or Firm:
GOTOH & PARTNERS (JP)
Download PDF:
Previous Patent: CONTROL METHOD, SERVER DEVICE, PROGRAM, AND DATA DELIVERY SYSTEM
Next Patent: ACTUATOR, SAFETY DEVICE, AND FLYING BODY
Next Patent: ACTUATOR, SAFETY DEVICE, AND FLYING BODY