Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/087750
Kind Code:
A1
Abstract:
Disclosed in the present application are a semiconductor integrated circuit device and a manufacturing method therefor. By means of the semiconductor integrated circuit device, a resistance variation layer covers an outer side of a bump structure, and the layer cannot be damaged by an etching process during a process preparation procedure thereof, thereby avoiding the possibility of a strong and single conductive filament being formed due to damage by the etching process during an electrical operation procedure. In addition, a thermal enhanced layer (TEL) that completely covers the semiconductor integrated circuit device is added to the device, such that a plurality of weakly conductive filaments are formed more easily in the device, thereby achieving the aim of regulating a pulse to control a continuous change in conductance; furthermore, the semiconductor integrated circuit device can be better used as an analog-type memory, so as to be applied to scenarios such as CIM.
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Inventors:
LIU YU (CN)
SHEN TING YING (CN)
CHIU TAI WEI (CN)
KANG SZU-CHUN (CN)
SHAN LIJUN (CN)
ZHANG YAJUN (CN)
SHEN TING YING (CN)
CHIU TAI WEI (CN)
KANG SZU-CHUN (CN)
SHAN LIJUN (CN)
ZHANG YAJUN (CN)
Application Number:
PCT/CN2022/105494
Publication Date:
May 25, 2023
Filing Date:
July 13, 2022
Export Citation:
Assignee:
XIAMEN INDUSTRIAL TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L45/00; H01L27/24
Foreign References:
| CN114220915A | 2022-03-22 | |||
| CN109473546A | 2019-03-15 | |||
| CN111584711A | 2020-08-25 | |||
| CN101872839A | 2010-10-27 | |||
| US20070295948A1 | 2007-12-27 |
Attorney, Agent or Firm:
BEIJING LEPATENT INTELLECTUAL PROPERTY AGENCY (GENERAL PARTNERSHIP) (CN)
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