Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/053711
Kind Code:
A1
Abstract:
The semiconductor laser device (100) comprises a laser section (20), a wave guide path (28) for propagating laser light emitted by the laser section (20), and a light detector (24) for detecting the laser light, which have been formed on the same semiconductor substrate (17). The light detector (24) comprises a p-type contact layer (35c) connected to an anodic electrode (96) and formed above the side of the wave guide path (28) facing away from the semiconductor substrate (17), an n-type contact layer (94) connected to a cathodic electrode (95), and an undoped layer (93) formed between the p-type contact layer (35c) and the n-type contact layer (94). The undoped layer (93) and the n-type contact layer (94) in the light detector (24) comprise a main light-receiving section (91) disposed above the wave guide path (28) in such a manner as to encompass the wave guide path (28) and an expansion section (92) disposed so as to connect to the main light-receiving section (91) while not encompassing the wave guide path (28).
Inventors:
NIWA AKITSUGU (JP)
ABE KENICHI (JP)
ABE KENICHI (JP)
Application Number:
PCT/JP2019/036336
Publication Date:
March 25, 2021
Filing Date:
September 17, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/026; H01L31/12
Foreign References:
| JPS63222485A | 1988-09-16 | |||
| JP2005183955A | 2005-07-07 | |||
| JP2013540351A | 2013-10-31 | |||
| JP2016096310A | 2016-05-26 | |||
| JP2018046258A | 2018-03-22 | |||
| JP2005322913A | 2005-11-17 | |||
| JPH09153636A | 1997-06-10 | |||
| JP2000353818A | 2000-12-19 | |||
| US20060013273A1 | 2006-01-19 | |||
| US20100301441A1 | 2010-12-02 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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