Title:
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/088740
Kind Code:
A1
Abstract:
A semiconductor structure and a formation method thereof. The formation method comprises: providing a substrate (1) comprising a first region (A) and a second region (B); forming an insulating layer (2) on the substrate (1); etching the insulating layer (2) on the second region (B), such that the insulating layer (2) on the first region (A) constitutes a first insulating layer (210), and the remaining portion of the insulating layer (2) on the second region (B) after the etching has been performed constitutes a second insulating layer (220), and a surface of the second insulating layer (220) on a side facing away from the substrate (1) is lower than a surface of the first insulating layer (210) on a side facing away from the substrate (1); forming a first barrier layer (31) covering the first insulating layer (210) and a second barrier layer (32) covering the second insulating layer (220), wherein the thickness of the second barrier layer (32) is greater than the thickness of the first barrier layer (31); etching the first barrier layer (31), the second barrier layer (32) and the first insulating layer (210), so as to form a through-hole (201) in the first insulating layer (210) and to form a hole segment (301) in the second barrier layer (32); and removing the first barrier layer (31) and the second barrier layer (32). The formation method can prevent defects from occurring in edge regions of a substrate, thereby improving the yield of semiconductor structures.
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Inventors:
SUN JINPING (CN)
ZHAO LIANG (CN)
WANG WENFENG (CN)
ZHAO LIANG (CN)
WANG WENFENG (CN)
Application Number:
PCT/CN2021/104356
Publication Date:
May 05, 2022
Filing Date:
July 02, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242
Foreign References:
| CN110970460A | 2020-04-07 | |||
| CN110970403A | 2020-04-07 | |||
| CN108336068A | 2018-07-27 | |||
| CN102117698A | 2011-07-06 | |||
| US20100190315A1 | 2010-07-29 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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