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Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/010674
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a doped conductive layer, wherein doped ions are doped in the doped conductive layer; a metal conductive layer located on the doped conductive layer; a nitrogen-containing dielectric layer located on the metal conductive layer; a first molybdenum nitride layer located between the doped conductive layer and the metal conductive layer and configured to electrically connect the doped conductive layer and the metal conductive layer; and a second molybdenum nitride layer located between the metal conductive layer and the nitrogen-containing dielectric layer, wherein the atomic number proportion of nitrogen atoms in the second molybdenum nitride layer is greater than the atomic number proportion of nitrogen atoms in the first molybdenum nitride layer. The embodiments of the present invention are beneficial for improving the conductivity of the metal conductive layer.

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Inventors:
QIAN DAHAN (CN)
ZHANG JIE (CN)
HUANG JUANJUAN (CN)
BAI JIE (CN)
Application Number:
PCT/CN2021/121027
Publication Date:
February 09, 2023
Filing Date:
September 27, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/532; H01L21/768
Foreign References:
CN109216320A2019-01-15
CN108269810A2018-07-10
CN110911352A2020-03-24
CN111092081A2020-05-01
US20180102284A12018-04-12
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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