Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/130550
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method. The semiconductor structure comprises: a substrate (100), the substrate (100) being provided with bit lines (104) extending in a first direction; semiconductor channels (110), the semiconductor channels (110) being located on the bit lines (104); semiconductor doped layers (101), the semiconductor doped layers (101) being located on side faces of the bit lines (104), and top faces of the semiconductor doped layers (101) being in contact with the semiconductor channels (110); word lines (130) extending in a second direction, the semiconductor channels (110) being partially surrounded by the word lines (130), and bottom surfaces of the word lines (130) being higher than top surfaces of the bit lines (104); word line dielectric layers (131), the word line dielectric layers (131) being located between the word lines (130) and the semiconductor channels (110); and isolation layers (120), the isolation layers (120) being located between the word lines (130) and the bit lines (104) and between the word lines (130) and the semiconductor doped layers (101). The semiconductor structure and the manufacturing method provided in the embodiments of the present disclosure are at least conducive to solving the problem that the conductive capability between a bit line structure and an active structure is too weak.
More Like This:
Inventors:
ZHANG KUI (CN)
Application Number:
PCT/CN2022/078509
Publication Date:
July 13, 2023
Filing Date:
February 28, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/78; H01L21/336
Foreign References:
| CN111785719A | 2020-10-16 | |||
| CN111211170A | 2020-05-29 | |||
| CN102903668A | 2013-01-30 | |||
| CN102034759A | 2011-04-27 | |||
| US20160163637A1 | 2016-06-09 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
Download PDF: