SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION

Title:

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION

Document Type and Number:

WIPO Patent Application WO/2022/270484

Kind Code:

A1

Abstract:

The purpose of the present invention is to provide a method for producing a semiconductor substrate using a composition from which a film having excellent etching resistance, heat resistance, and bending resistance can be formed, and a composition. This method for manufacturing a semiconductor substrate comprises: a step for applying a resist underlayer film-forming composition directly or indirectly to a substrate; a step for forming resist patterns directly or indirectly on the resist underlayer film formed in the application step; and a step for performing etching using the resist patterns as masks, the resist underlayer film-forming composition containing a solvent and a polymer having a repeating unit represented by formula (1). (In formula (1), Ar1 is a divalent group having a 5- to 40-membered aromatic ring. R0 is a monovalent group having a 5- to 40-membered aromatic ring and has at least one group selected from the group consisting of groups represented by formula (2-1) and groups represented by formula (2-2).) (In formulas (2-1) and (2-2), R7 each independently are a C1-20 divalent organic group or a single bond. * is a bond with a carbon atom in an aromatic ring.)

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Inventors:

NAKATSU HIROKI (JP)
ABE SHINYA (JP)
YAMADA SHUHEI (JP)
TSUJI TAKASHI (JP)
WAKAYAMA HIROKI (JP)
MAYUMI KOSUKE (JP)
MIYAUCHI HIROYUKI (JP)

Application Number:

PCT/JP2022/024633

Publication Date:

December 29, 2022

Filing Date:

June 21, 2022

Export Citation:

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Assignee:

JSR CORP (JP)

International Classes:

C08G8/30; G03F7/11; H01L21/027

Domestic Patent References:

WO2017141612A1

2017-08-24

Foreign References:

JP2021130763A	2021-09-09
JP2017021329A	2017-01-26
JP2009014816A	2009-01-22
JP2017125182A	2017-07-20

Attorney, Agent or Firm:

UNIUS PATENT ATTORNEYS OFFICE (JP)

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