SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

Title:

SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2012/157654

Kind Code:

A1

Abstract:

Provided are an SiC single crystal having one or more orientation regions where linearity of basal plane dislocations is high, and the basal plane dislocations are oriented in the three crystallographically equivalent <11-20> directions, and an SiC wafer and a semiconductor device manufactured from such an SiC single crystal. This SiC single crystal can be manufactured by using a seed crystal that has a small offset angle on the {0001} plane highest portion side and a large offset angle on the offset direction downstream side, and growing a new crystal on the seed crystal.

More Like This:

JP2008515749	100mm Silicon Carbide Wafer with Low Micropipe
JP7024622	Silicon carbide single crystal and its manufacturing method
WO/2006/115148	SILICON CARBIDE SINGLE-CRYSTAL WAFER AND PROCESS FOR PRODUCING THE SAME

Inventors:

GUNJISHIMA ITARU (JP)
URAKAMI YASUSHI (JP)
ADACHI AYUMU (JP)

Application Number:

PCT/JP2012/062448

Publication Date:

November 22, 2012

Filing Date:

May 16, 2012

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOYOTA CHUO KENKYUSHO KK (JP)
TOYOTA MOTOR CO LTD (JP)
DENSO CORP (JP)
GUNJISHIMA ITARU (JP)
URAKAMI YASUSHI (JP)
ADACHI AYUMU (JP)

International Classes:

C30B29/36; H01L29/161

Foreign References:

JP2012046377A	2012-03-08
JP2010235390A	2010-10-21
JP2012116676A	2012-06-21
JP2004323348A	2004-11-18
JP2012072034A	2012-04-12

Attorney, Agent or Firm:

HATAKEYAMA Fumio et al. (JP)
Fumio Hatakeyama (JP)

Download PDF:

View/Download PDF PDF Help

Claims:

Previous Patent: CHARGING DISPLAY DEVICE

Next Patent: HEAT RAY-SHIELDING MATERIAL, LAMINATED STRUCTURE, AND LAMINATED GLASS