Title:
SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/190458
Kind Code:
A1
Abstract:
This silicon carbide substrate has a first main surface, a second main surface, and an outer peripheral surface. When a defect on the first main surface as observed using a mirror electron microscope while irradiating UV light on the first main surface is defined as a first defect, and a defect on the first main surface as observed using molten potassium hydroxide is defined as a second defect, the value obtained by dividing the surface density of the first defect by the surface density of the second defect is greater than 0.9 and less than 1.2. The first defect consists of a first latent flaw, a first basal surface dislocation separated from the first latent flaw, a second basal surface dislocation in contact with the first latent flaw, and a second latent flaw separated from each of the first basal surface dislocation and the second basal surface dislocation. The second defect consists of a first basal surface dislocation and a second basal surface dislocation.
Inventors:
OKITA KYOKO (JP)
HONKE TSUBASA (JP)
UETA SHUNSAKU (JP)
HONKE TSUBASA (JP)
UETA SHUNSAKU (JP)
Application Number:
PCT/JP2021/041174
Publication Date:
September 15, 2022
Filing Date:
November 09, 2021
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B33/08; H01L21/20; H01L21/306; H01L21/66
Domestic Patent References:
| WO2019044841A1 | 2019-03-07 |
Foreign References:
| JP2017041526A | 2017-02-23 | |||
| JP2020083671A | 2020-06-04 | |||
| JP2020131301A | 2020-08-31 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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