Title:
SILICON SINGLE CRYSTAL MANUFACTURING SYSTEM AND SILICON SINGLE CRYSTAL MANUFACTURING METHOD USING THE SYSTEM
Document Type and Number:
WIPO Patent Application WO/2008/001569
Kind Code:
A1
Abstract:
A system is provided for designing manufacturing conditions for controlling an
F/G value within a prescribed range to have the crystal quality of a silicon single
crystal manufactured by a pulling apparatus employing the CZ method to be within
a target standard. The silicon single crystal manufacturing system is provided
with at least a means (1) for automatically designing manufacturing conditions
of the silicon single crystal of a subsequent batch temporarily, based on the
crystal quality results of the silicon single crystal of the previous batch;
a means (2) for calculating a correction quantity from the change quantity of
a value F and/or G brought by the constitution member of the pulling apparatus for
the subsequent batch; a means (3) for calculating a correction quantity from the
change quantity of a value F and/or G brought by the manufacturing step of the subsequent
batch; and a means (4) for calculating manufacturing conditions of the subsequent
batch by adding the correction quantity obtained from the means (2) and/or the
means (3) to the manufacturing conditions obtained from the means (1). Thus,
the silicon single crystal having desired crystal qualities can be surely obtained,
and the silicon single crystal manufacturing system with improved productivity
and yield and the silicon single crystal manufacturing method using such system
are provided.
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Inventors:
IIDA MAKOTO (JP)
MITAMURA NOBUAKI (JP)
YANAGIMACHI TAKAHIRO (JP)
MITAMURA NOBUAKI (JP)
YANAGIMACHI TAKAHIRO (JP)
Application Number:
PCT/JP2007/060772
Publication Date:
January 03, 2008
Filing Date:
May 28, 2007
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
IIDA MAKOTO (JP)
MITAMURA NOBUAKI (JP)
YANAGIMACHI TAKAHIRO (JP)
IIDA MAKOTO (JP)
MITAMURA NOBUAKI (JP)
YANAGIMACHI TAKAHIRO (JP)
International Classes:
C30B29/06; C30B15/22
Foreign References:
| JP2005162558A | 2005-06-23 | |||
| JP2005015312A | 2005-01-20 | |||
| JP3460551B2 | 2003-10-27 | |||
| JP2005162558A | 2005-06-23 |
Other References:
V. V. VORONKOV, JOURNAL OF CRYSTAL GROWTH, vol. 59, 1982, pages 625 - 643
See also references of EP 2039811A4
See also references of EP 2039811A4
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-4 Motoasakusa 2-chome, Taito-k, Tokyo 41, JP)
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