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Patent Searching and Data


Title:
SILICON SINGLE CRYSTAL, METHOD FOR PRODUCING SAME, AND SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2019/107190
Kind Code:
A1
Abstract:
[Problem] To provide a method for producing a silicon single crystal having a low oxygen concentration and high uniformity of in-plane distributions of oxygen concentration and resistivity, and a silicon wafer. [Solution] A method for producing a silicon single crystal by the MCZ method, said method involving drawing up a silicon single crystal 3 from a silicon melt 2 in a quartz crucible 11 while applying a cusp magnetic field, wherein the crystal rotary speed when the silicon single crystal 3 is being drawn up while being rotated is 17-19 rpm. The oxygen concentration of the silicon single crystal 3 drawn up in this manner is from 1 × 1017atoms/cm3 to 8 ×1017atoms/cm3, ROG within a crystal cross-section orthogonal to the crystal growth direction is 15% or less, and RRG within the crystal cross-section is 5% or less.

Inventors:
TOYOTAKE Takamitsu (2-1 Shibaura 1-chom, Minato-ku Tokyo 34, 〒1058634, JP)
Application Number:
JP2018/042522
Publication Date:
June 06, 2019
Filing Date:
November 16, 2018
Export Citation:
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Assignee:
SUMCO CORPORATION (2-1 Shibaura 1-chome, Minato-ku Tokyo, 34, 〒1058634, JP)
International Classes:
C30B29/06; C30B15/20; H01L21/208
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (Daisan-Taiyo Bldg. 7th Floor, 5-1 Ginza 1-Chom, Chuo-Ku Tokyo 61, 〒1040061, JP)
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