SILICON SINGLE CRYSTAL, METHOD FOR PRODUCING SAME, AND SILICON WAFER

Title:

SILICON SINGLE CRYSTAL, METHOD FOR PRODUCING SAME, AND SILICON WAFER

Document Type and Number:

WIPO Patent Application WO/2019/107190

Kind Code:

A1

Abstract:

[Problem] To provide a method for producing a silicon single crystal having a low oxygen concentration and high uniformity of in-plane distributions of oxygen concentration and resistivity, and a silicon wafer. [Solution] A method for producing a silicon single crystal by the MCZ method, said method involving drawing up a silicon single crystal 3 from a silicon melt 2 in a quartz crucible 11 while applying a cusp magnetic field, wherein the crystal rotary speed when the silicon single crystal 3 is being drawn up while being rotated is 17-19 rpm. The oxygen concentration of the silicon single crystal 3 drawn up in this manner is from 1 × 1017atoms/cm3 to 8 ×1017atoms/cm3, ROG within a crystal cross-section orthogonal to the crystal growth direction is 15% or less, and RRG within the crystal cross-section is 5% or less.

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Inventors:

TOYOTAKE TAKAMITSU (JP)

Application Number:

PCT/JP2018/042522

Publication Date:

June 06, 2019

Filing Date:

November 16, 2018

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Assignee:

SUMCO CORP (JP)

International Classes:

C30B29/06; C30B15/20; H01L21/208

Foreign References:

JP2001158690A	2001-06-12
JP2000239096A	2000-09-05
JPH10287489A	1998-10-27

Attorney, Agent or Firm:

WASHIZU Mitsuhiro et al. (JP)

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