Title:
SOLID-STATE IMAGING ELEMENT, ELECTRONIC DEVICE, AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/192576
Kind Code:
A1
Abstract:
The present disclosure relates to a solid-state imaging element, the conversion efficiency of which can be more improved, an electronic device, and a manufacturing method.
In the solid-state imaging element, element isolation regions for isolating the elements constituting a pixel include a first trench element isolation region and a second trench element isolation region both having a trench structure, said first trench element isolation region being formed in the region between an FD portion and an amplification transistor, said second trench element isolation region being formed in the region other than the region between the FD portion and the amplification transistor. The first trench element isolation region is formed deeper than the second trench element isolation region. The present technique is applicable to, for example, CMOS image sensors.
Inventors:
SATO NAOYUKI (JP)
Application Number:
PCT/JP2014/063209
Publication Date:
December 04, 2014
Filing Date:
May 19, 2014
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H01L21/76; H04N5/374
Foreign References:
| JP2010087369A | 2010-04-15 | |||
| JP2008205022A | 2008-09-04 | |||
| JP2012119349A | 2012-06-21 | |||
| JP2002118249A | 2002-04-19 | |||
| JP2003078002A | 2003-03-14 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
Nishikawa 孝 (JP)
Download PDF:
Previous Patent: TRANSFER SUPPORT APPARATUS
Next Patent: IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND PROGRAM
Next Patent: IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND PROGRAM