Title:
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2020/059174
Kind Code:
A1
Abstract:
Provided is a technology including: a processing chamber for processing a substrate; a gas supply system for supplying a processing gas to the inside of the processing chamber; a first plasma unit that is disposed so as to wrap around the outer circumference of the processing chamber, and that generates processing gas plasma inside the processing chamber; and a second plasma unit that is the upper part of the processing chamber and is disposed so as to protrude thereinto, and that generates processing gas plasma inside the processing chamber.
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Inventors:
TAKEDA TSUYOSHI (JP)
Application Number:
PCT/JP2019/009658
Publication Date:
March 26, 2020
Filing Date:
March 11, 2019
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/505; H01L21/318; H05H1/46
Domestic Patent References:
| WO2014050979A1 | 2014-04-03 | |||
| WO2011013458A1 | 2011-02-03 | |||
| WO2012032596A1 | 2012-03-15 | |||
| WO2005094140A1 | 2005-10-06 |
Foreign References:
| JPH0974089A | 1997-03-18 | |||
| JPH08213196A | 1996-08-20 | |||
| JPH1187092A | 1999-03-30 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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