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Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/044789
Kind Code:
A1
Abstract:
In the present invention, an alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.

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Inventors:
NEGORO SEI (JP)
KOBAYASHI KENJI (JP)
Application Number:
PCT/JP2019/026609
Publication Date:
March 05, 2020
Filing Date:
July 04, 2019
Export Citation:
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Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/308; H01L21/306
Domestic Patent References:
WO2012029450A12012-03-08
Foreign References:
JP2012199521A2012-10-18
JP2008277715A2008-11-13
JP2013258391A2013-12-26
JP2006005261A2006-01-05
JP2013251459A2013-12-12
Attorney, Agent or Firm:
AI ASSOCIATION OF PATENT AND TRADEMARK ATTORNEYS (JP)
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