SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH

WIPO Patent Application WO/2020/090814

A1

According to the present invention, a plurality of nanometer-sized projections (1a, 11a) are formed on main surfaces of sapphire substrates (1, 11), each of which uses the r-plane as a main surface; AlN buffer layers (2, 12) are formed on the main surfaces using a sputtering method; an AlN buffer layer (2, 12) formed on a first sapphire substrate (1, 11) and an AlN buffer layer (2, 12) formed on a second sapphire substrate (1, 11) are arranged to face each other, and the AlN buffer layers (2, 12) are brought into contact with each other, thereby being superposed upon each other; and the AlN buffer layers (2, 12) superposed upon each other are subjected to annealing.

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DAICHO HISAYOSHI (JP)
JINNO DAIKI (JP)
SUGIMORI SHOGO (JP)

PCT/JP2019/042370

May 07, 2020

October 29, 2019

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KOITO MFG CO LTD (JP)

C30B29/38; C23C14/06; C23C14/58; C23C16/02; C23C16/34; C30B25/18; H01L21/20; H01L21/205; H01L33/12; H01L33/16; H01L33/22; H01L33/32

JP2018065733A	2018-04-26
JP2010177552A	2010-08-12
JP2011082570A	2011-04-21
JP2018056568A	2018-04-05

SHIN-EI PATENT FIRM, P.C. (JP)

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