Title:
THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/011864
Kind Code:
A1
Abstract:
Provided is a thin film device that includes a thin film electrode including a main electrode layer formed of tungsten, wherein the thin film electrode has low resistivity. A thin film device (1) includes a thin film electrode (7) that has a ground layer (7A) and a main electrode layer (7B) formed on the ground layer (7A), the ground layer (7A) is formed of titanium tungsten alloy in which a surface morphology has a wave-shaped crystal structure, and the main electrode layer (7B) is formed of tungsten in which a surface morphology has a wave-shaped crystal structure.
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Inventors:
UMEDA KEIICHI (JP)
Application Number:
PCT/JP2012/067535
Publication Date:
January 24, 2013
Filing Date:
July 10, 2012
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
UMEDA KEIICHI (JP)
UMEDA KEIICHI (JP)
International Classes:
B81B3/00; B81C1/00; C23C14/14; H01L41/09; H01L41/187
Domestic Patent References:
| WO1998058390A1 | 1998-12-23 |
Foreign References:
| JP2006060067A | 2006-03-02 | |||
| JP2006032227A | 2006-02-02 | |||
| JP2004105930A | 2004-04-08 | |||
| JP2003297445A | 2003-10-17 | |||
| JP2003039392A | 2003-02-13 | |||
| JP2009152194A | 2009-07-09 |
Other References:
See also references of EP 2733114A4
Attorney, Agent or Firm:
Kaede Patent Attorneys' Office (JP)
Patent business corporation Kaede Patent Attorneys' Office (JP)
Patent business corporation Kaede Patent Attorneys' Office (JP)
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Claims: