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Title:
THIN FILM STRUCTURE AND PRODUCTION METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2015/041390
Kind Code:
A1
Abstract:
The present invention concerns a thin film structure wherein the gallium nitride bonding density can be markedly reduced and a production method for same. Provided is a thin film structure comprising a sapphire-containing supporting substrate, and comprising an epitaxial layer which is disposed on the supporting substrate and contains gallium nitride; and the upper part of the supporting substrate facing the epitaxial layer is made of a layer wherein silicon is either diffused or ion implanted through the upper surface of the supporting substrate.

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Inventors:
HAN HEUNG NAM (KR)
LEE SUNG BO (KR)
Application Number:
PCT/KR2014/001290
Publication Date:
March 26, 2015
Filing Date:
February 18, 2014
Export Citation:
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Assignee:
UNIV SEOUL NAT R & DB FOUND (KR)
International Classes:
C30B29/38; C23C14/48
Domestic Patent References:
WO2012161451A22012-11-29
Foreign References:
JPH11135889A1999-05-21
US5760426A1998-06-02
JP2002343718A2002-11-29
JP2003324069A2003-11-14
KR20100008123A2010-01-25
Attorney, Agent or Firm:
LEE, InHaeng et al. (KR)
이인행 (KR)
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