Title:
THIN FILM TRANSISTOR MANUFACTURING METHOD AND MASK USED IN SAME
Document Type and Number:
WIPO Patent Application WO/2017/159153
Kind Code:
A1
Abstract:
The present invention is a thin film transistor manufacturing method including a process for irradiating an amorphous silicon film 8 formed on a substrate with laser light; a laser annealing step for forming a polysilicon layer 9 including a channel region 52 by irradiating a region in the amorphous silicon film 8 including a forming region for the channel region 52 with the laser light and heating, melting, and recrystallizing the region including the forming region; and a step for removing regions in the polysilicon film 9 other than the channel region 52 by etching. By doing so, the present invention provides a thin film transistor manufacturing method capable of further promoting recrystallization of the amorphous silicon film 8 even under circumstances in which laser light irradiation conditions are limited and increasing mobility, and a mask used in the manufacturing method.
Inventors:
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2017/004985
Publication Date:
September 21, 2017
Filing Date:
February 10, 2017
Export Citation:
Assignee:
V TECH CO LTD (JP)
International Classes:
H01L21/336; H01L21/20; H01L29/786
Foreign References:
| JP2000077353A | 2000-03-14 | |||
| JP2013157549A | 2013-08-15 | |||
| JP2002289524A | 2002-10-04 | |||
| JP2003243304A | 2003-08-29 | |||
| JP2011192771A | 2011-09-29 |
Attorney, Agent or Firm:
OGAWA, Moriaki et al. (JP)
Download PDF:
Previous Patent: ORGANIC ELECTROLUMINESCENT ELEMENT
Next Patent: FOLLOW-UP COMPOSITION FOR COSMETIC APPLICATOR
Next Patent: FOLLOW-UP COMPOSITION FOR COSMETIC APPLICATOR