Title:
THIN FILM TRANSISTOR AND PREPARATION METHOD, AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2024/065110
Kind Code:
A1
Abstract:
The present application relates to the technical field of display, and discloses a thin film transistor and a preparation method, and a display panel. Since the concentration of hydrogen in a semiconductor layer of the thin film transistor is greater than a concentration threshold, hydrogen can fill an oxygen vacancy in the semiconductor layer, so that the oxygen vacancy in the semiconductor layer is reduced. Therefore, the quality of film layers of the semiconductor layer can be ensured, and thus the performance of the thin film transistor is ensured. Moreover, since the temperature of a reaction chamber in the preparation process of the thin film transistor is less than a temperature threshold, the preparation of film layers in the thin film transistor is relatively controllable, and the damage to a source/drain layer of the thin film transistor is avoided, thereby ensuring the yield of the display panel.
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Inventors:
LI YANLONG (CN)
SHANG HUIRONG (CN)
CAO KUN (CN)
HUANG HONGTAO (CN)
ZHANG QIN (CN)
SHANG HUIRONG (CN)
CAO KUN (CN)
HUANG HONGTAO (CN)
ZHANG QIN (CN)
Application Number:
PCT/CN2022/121471
Publication Date:
April 04, 2024
Filing Date:
September 26, 2022
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
NANJING BOE DISPLAY TECH CO LTD (CN)
NANJING BOE DISPLAY TECH CO LTD (CN)
International Classes:
G02F1/133; H01L21/336; H01L29/786
Foreign References:
| JP2012089878A | 2012-05-10 | |||
| CN107078166A | 2017-08-18 | |||
| CN103000694A | 2013-03-27 | |||
| TW201727725A | 2017-08-01 | |||
| CN102664194A | 2012-09-12 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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