TRANSISTOR ELEMENT, ITS MANUFACTURING METHOD, LIGHT EMITTING ELEMENT, AND DISPLAY

WIPO Patent Application WO/2007/119490

A1

Provided is a transistor element capable of a large-current modulation with a low voltage between an emitter electrode and a collector electrode. Also provided are a manufacturing method of the transistor element, a light emitting element and a display using the transistor element. The transistor element includes an emitter electrode (3) and a collector electrode (2). Semiconductor layers (5) (5A, 5B) and a sheet-shaped electrode (4) are arranged between the emitter electrode (3) and the collector electrode (2). The semiconductor layers (5) are arranged between the emitter electrode (3) and a base electrode (4) and between the collector electrode (2) and the base electrode (4), which constitute a second semiconductor layer (5B) and a first semiconductor layer (5A), respectively. Furthermore, the thickness of the base electrode is preferably 80 nm or below. Moreover, a dark current suppression layer is provided between the emitter electrode and the base electrode or between the collector electrode and the base electrode.

JP3367546	PROBLEM TO BE SOLVED: To manufacture a resonance tunnel structure.
JP5182775	Transistor elements and their manufacturing methods, electronic devices, light emitting elements and displays
JP3779401	DIODE AND DRIVING METHOD THEREOF

YOKOYAMA MASAAKI (JP)
NAKAYAMA KENICHI (JP)

PCT/JP2007/055891

October 25, 2007

March 22, 2007

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UNIV OSAKA (JP)
SUMITOMO CHEMICAL CO (JP)
DAINIPPON PRINTING CO LTD (JP)
PIONEER CORP (JP)
RICOH KK (JP)
YOKOYAMA MASAAKI (JP)
NAKAYAMA KENICHI (JP)

H01L29/68; H01L51/05; H01L51/30; H01L51/50; H05B33/26

JPS60206073A	1985-10-17
JPS5451782A	1979-04-23
JPS6193663A	1986-05-12
US5315129A	1994-05-24

FUJIMOTO ET AL.: "Fabrication of a vertical-type organic transistor with a planar metal base", APPLIED PHYSICS LETTERS OF THE AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 87, no. 13, pages 133503 - 1,133503-3
NAKAYAMA ET AL.: "Charge-injection-controlled organic transistor", APPLIED PHYSICS LETTERS OF THE AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, vol. 82, no. 25, pages 4584 - 4586
See also references of EP 2009700A4

YOSHITAKE, Kenji et al. (Room 323 Fuji Bldg., 2-3, Marunouchi 3-chom, Chiyoda-ku Tokyo 05, JP)

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