Title:
TRANSISTOR AND METHOD FOR FABRICATING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/227290
Kind Code:
A1
Abstract:
A transistor and a method for fabricating the transistor are provided. The semiconductor structure transistor includes a base, a low-dimensional material layer, a plurality of spacers, a source, a drain, and a gate stack. The low-dimensional material layer is provided above the base. The plurality of spacers is provided on a surface of the low-dimensional material layer away from the base and spaced apart from each other. The source and the drain are provided on the surface of the low-dimensional material layer away from the base, respectively. The gate stack is provided on the surface of the low-dimensional material layer away from the base and between the source and the drain, in which the gate stack, the source and the drain are separated by the spacers, and in contact with the spacers, respectively. Therefore, the transistor has advantages of excellent comprehensive performance, high process compatibility, and good device uniformity.
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Inventors:
XU HAITAO (CN)
Application Number:
PCT/CN2020/109815
Publication Date:
November 18, 2021
Filing Date:
August 18, 2020
Export Citation:
Assignee:
BEIJING HUA TAN YUAN XIN ELECTRONICS TECH CO LTD (CN)
International Classes:
H01L21/336; H01L29/06; H01L29/10; H01L29/417; H01L29/78
Domestic Patent References:
| WO2017111774A1 | 2017-06-29 |
Foreign References:
| CN108780813A | 2018-11-09 | |||
| CN109786250A | 2019-05-21 | |||
| CN103258741A | 2013-08-21 | |||
| US20190273144A1 | 2019-09-05 | |||
| CN108713254A | 2018-10-26 |
Attorney, Agent or Firm:
TSINGYIHUA INTELLECTUAL PROPERTY LLC (CN)
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